Electronic and Electrical Engineering: Fully Funded EPSRC and Swansea PhD Scholarship

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Cubic boron arsenide (c-BAs) is emerging as a revolutionary semiconductor exhibiting a remarkably close electron mobility of 1400 cm2/Vs (1400 cm2/Vs for silicon) and hole mobility of about 2100 cm2/Vs (450 cm2/Vs for silicon), at room temperature. While the electron mobility is comparable to silicon, the hole mobility is substantially larger. Additionally, the c-BAs measured thermal conductivity is 1000 to 1300 W/mK, well above silicon (140 W/mK). These outstanding transport properties of c-BA call for great improvements in digital, radio-frequency (mobile computing), and photovoltaic (solar cells) applications.

However, a superior carrier transport of c-BA is not sufficient on its own. Therefore, this project will study the carrier mobility and density in metal-oxide-semiconductor (MOS) structures which are essential elements of electronic control of including complementary metal-oxide-semiconductor (CMOS) transistor logic in every device we use. We prepare these structures in the Centre for Integrative Semiconductor Materials (CISM), a new £90M facility (~£140M overall investment) with an area of 4,320 m2. The interface between a dielectric layer (oxide) and the c-BAs (semiconductor) will inevitably degrade the electron and hole mobility. The project will aim to optimize the choice of the dielectric and the metal to deliver the best possible mobility and density in the MOS structures.

Eligibility

Candidates must hold an undergraduate degree at 2.1 level (or Non-UK equivalent as defined by Swansea University) in Engineering or similar relevant science discipline.

If applicable – IELTS 6.5 overall (with at least 5.5 in each individual component) or Swansea recognised equivalent.

Due to funding restrictions, this scholarship is open to applicants eligible to pay tuition fees at the UK rate only, as defined by UKCISA regulations.

NB: If you are holding a non-UK degree, please see Swansea University degree comparisons to find out if you meet the eligibility.

Benefits

This scholarship covers the full cost of UK tuition fees and an annual stipend at UKRI rate (currently £18,622 for 2023/24).

Additional research expenses will also be available.

Application

To apply, please complete your application online with the following information:

Course choice – please select Electronic and Electrical Engineering / PhD / Full-time / 3 Year / October

Start year – please select 2023

Funding (page 8) –

‘Are you funding your studies yourself?’ – please select No

‘Name of Individual or organisation providing funds for study’ – please enter ‘RS416 - PhD Elec Eng**'**

*It is the responsibility of the applicant to list the above information accurately when applying, please note that applications received without the above information listed will not be considered for the scholarship award.

One application is required per individual Swansea University led research scholarship award; applications cannot be considered listing multiple Swansea University led research scholarship awards.

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Cubic boron arsenide (c-BAs) is emerging as a revolutionary semiconductor exhibiting a remarkably close electron mobility of 1400 cm2/Vs (1400 cm2/Vs for silicon) and hole mobility of about 2100 cm2/Vs (450 cm2/Vs for silicon), at room temperature. While the electron mobility is comparable to silicon, the hole mobility is substantially larger. Additionally, the c-BAs measured thermal conductivity is 1000 to 1300 W/mK, well above silicon (140 W/mK). These outstanding transport properties of c-BA call for great improvements in digital, radio-frequency (mobile computing), and photovoltaic (solar cells) applications.

However, a superior carrier transport of c-BA is not sufficient on its own. Therefore, this project will study the carrier mobility and density in metal-oxide-semiconductor (MOS) structures which are essential elements of electronic control of including complementary metal-oxide-semiconductor (CMOS) transistor logic in every device we use. We prepare these structures in the Centre for Integrative Semiconductor Materials (CISM), a new £90M facility (~£140M overall investment) with an area of 4,320 m2. The interface between a dielectric layer (oxide) and the c-BAs (semiconductor) will inevitably degrade the electron and hole mobility. The project will aim to optimize the choice of the dielectric and the metal to deliver the best possible mobility and density in the MOS structures.

Eligibility

Candidates must hold an undergraduate degree at 2.1 level (or Non-UK equivalent as defined by Swansea University) in Engineering or similar relevant science discipline.
If applicable – IELTS 6.5 overall (with at least 5.5 in each individual component) or Swansea recognised equivalent.
Due to funding restrictions, this scholarship is open to applicants eligible to pay tuition fees at the UK rate only, as defined by UKCISA regulations.
NB: If you are holding a non-UK degree, please see Swansea University degree comparisons to find out if you meet the eligibility.

Benefits

This scholarship covers the full cost of UK tuition fees and an annual stipend at UKRI rate (currently £18,622 for 2023/24).

Additional research expenses will also be available.

Application

To apply, please complete your application online with the following information:

Course choice – please select Electronic and Electrical Engineering / PhD / Full-time / 3 Year / October
Start year – please select 2023
Funding (page 8) –
‘Are you funding your studies yourself?’ – please select No
‘Name of Individual or organisation providing funds for study’ – please enter ‘RS416 - PhD Elec Eng**'**

*It is the responsibility of the applicant to list the above information accurately when applying, please note that applications received without the above information listed will not be considered for the scholarship award.

One application is required per individual Swansea University led research scholarship award; applications cannot be considered listing multiple Swansea University led research scholarship awards.

APPLY NOW